An efficiency of 3.16% (V oc =0.24 V, FF=0.53) was achieved for μc-Si 0.23 Ge 0.77:H solar cell with i-layer thickness of 300 nm. We believe that the solar cell performances can be further improved by optimizing the p/i interface properties and also the introduction of high quality TCO front electrodes.
The devices obtained in this study have good electrical properties. The VOC of the germanium-based solar cells under the single-junction CC nanostructure absorber structure array is 0.31 V, and the JSC reaches 45.5 mA/cm 2. The FF value of the device can be calculated as 72.7% by Equation (4).
The VOC of the germanium-based solar cells under the single-junction CC nanostructure absorber structure array is 0.31 V, and the JSC reaches 45.5 mA/cm 2. The FF value of the device can be calculated as 72.7% by Equation (4). The η of the device of 10.3% can be reached by Equation (5).
Author to whom correspondence should be addressed. In this paper, germanium-based solar cells were designed based on germanium (Ge) materials, and the cross-cone (CC) nanostructures were used as the absorber layer of the solar cells.
Furthermore, Ge’s wider bandgap paves the way for enhanced electron movement, thereby boosting cell efficiency. The incorporation of germanium breathes new life into solar cell technology, offering several edges over traditional silicon-based photovoltaic systems.
In 2016, Masuda [ 12] reported on the growth of multijunction germanium-based solar cells based on molecular beam epitaxy technology, and the open-circuit voltage of ~0.175 V was obtained. In 2020, Baran [ 13] studied the effect of temperature and light intensity on the conversion efficiency of Ge-based solar cells.
Nonetheless, monetary considerations retain paramount importance while transitioning from laboratory-scale fabrication towards commercialization. In the realm of high-efficiency solar power systems, a profound enigma lies in the utilization of germanium as a semiconductor material.
An efficiency of 3.16% (V oc =0.24 V, FF=0.53) was achieved for μc-Si 0.23 Ge 0.77:H solar cell with i-layer thickness of 300 nm. We believe that the solar cell performances can be further improved by optimizing the p/i interface properties and also the introduction of high quality TCO front electrodes.
Thin-film silicon (Si) solar cells have received wide attention due to their potential for large areas and low-cost manufacturing. The abundance of raw materials makes these solar cells more attractive as a renewable energy source compared to other compound semiconductor thin-film solar cells [1], [2].Multi-junction Si-based solar cells offer an even more efficient …
A Ge:Si solar cell under a silicon solar cell can lead to as much as a 5.5% absolute efficiency gain for a multi-junction solar module at 30× concentration. This work demonstrated short circuit current densities that were 93% of the model prediction and open circuit voltages that were 92% of the model predictions for 88% Ge content ...
In this paper, germanium-based solar cells were designed based on germanium (Ge) materials, and the cross-cone (CC) nanostructures were used as the absorber layer of the solar cells. The optical path inside the …
The germanium-based solar cells convert up to twice as much light into electricity as their silicon-based counterparts. Since germanium is more resistant to damaging cosmic radiation than silicon, the solar cells'' lifespan can be …
Multijunction solar cell consisting of stacked a-Si:H top cell and hydrogenated amorphous silicon-germanium a-SiGe:H bottom cell with narrow bandgap is also widely studied to ensure absorption of the whole solar spectrum and thus boost cell efficiency. However, its production cost is still considerably high because germanium is exceedingly expensive and …
Most previous work on Ge:Si solar cells grown on silicon was based on low Ge content and as such would not perform well under Si. In 1997, a 9.1% efficiency Ge:Si solar cell with 10% Ge concentration was obtained by liquid phase epitaxy technology [1].Two years later, an efficiency of 11.30% was achieved for a 10% Ge content c-Ge:Si solar cell at one sun [2] …
In this paper, PC1D solar cell modeling software has been used to simulate and analyze the effects of the germanium thickness on the silicon/germanium superlattice (multilayer) solar cell. The ...
Space Solar Cells offer high efficiencies, starting from the 28% class and ending in the high-end cell class of 32%. All solar cells include the latest triple and quadruple junction technology, where III-V layers are grown on a Germanium substrate and the whole product range benefits from many years'' experience on the space market.
Si FT, Isabella O, Zeman M (2017) Thin-film amorphous silicon germanium solar cells with p- and n-type hydrogenated silicon oxide layers. Solar Energy Materials & Solar Cells 163:9–14. Article CAS Google Scholar Bose S, …
Researchers from the German Aerospace Center (DLR) have fabricated a semitransparent solar cell based on ultra-thin hydrogenated amorphous multiple quantum wells (MQWs) made of silicon and...
Researchers from the German Aerospace Center (DLR) have fabricated a semitransparent solar cell based on ultra-thin hydrogenated amorphous multiple quantum wells (MQWs) made of silicon and...
In this paper, germanium-based solar cells were designed based on germanium (Ge) materials, and the cross-cone (CC) nanostructures were used as the absorber layer of the solar cells. The optical path inside the absorber layer was increased by microstructure reflection, thereby increasing the absorption efficiency of the germanium-based solar ...
Exposed in step-like formation, layers of new photovoltaic cell harvest more of sun''s energy. A silicon solar cell with silicon-germanium filter using a step-cell design (large) and a gallium arsenide phosphide layer on …
It was reported that germanium doping in Czochralski silicon could eliminate void defects, enhance oxygen precipitation, improving internal gettering ability, and also increase mechanical strength. In this presentation, germanium doped crystal silicon used to fabricate silicon solar cells has been reviewed on basis of our recent work. The ...
An efficiency of 3.16% (V oc =0.24 V, FF=0.53) was achieved for μc-Si 0.23 Ge 0.77:H solar cell with i-layer thickness of 300 nm. We believe that the solar cell performances …
We introduce a novel germanium-on-nothing (GON) technology to fabricate ultrathin Ge films for lightweight and thin GaAs solar cells. GON membranes formed by reorganization of cylindrical pores during annealing enable the growth and transfer of GaAs cells and substrate reuse. Compared with previous porous Ge studies, we significantly improve the …
It was reported that germanium doping in Czochralski silicon could eliminate void defects, enhance oxygen precipitation, improving internal gettering ability, and also …
The incorporation of germanium breathes new life into solar cell technology, offering several edges over traditional silicon-based photovoltaic systems. The conversion efficiency – a key yardstick in renewable energy production – can witness marked improvement with germanium-centric solar power frameworks. Recent research indeed paints an ...
A Ge:Si solar cell under a silicon solar cell can lead to as much as a 5.5% absolute efficiency gain for a multi-junction solar module at 30× concentration. This work …
The germanium-based solar cells convert up to twice as much light into electricity as their silicon-based counterparts. Since germanium is more resistant to damaging cosmic radiation than silicon, the solar cells'' lifespan can be extended from 15 to 20 years.
Abstract: Low band gap germanium:silicon (Ge:Si) solar cells for operation with a silicon solar cell in a multi-junction concentrator system was designed, fabricated, characterized and analyzed. …
Exposed in step-like formation, layers of new photovoltaic cell harvest more of sun''s energy. A silicon solar cell with silicon-germanium filter using a step-cell design (large) and a gallium arsenide phosphide layer on silicon step-cell proof-of-concept solar cell (small). Credit: Tahra Al Hammadi/Masdar Institute News.
Mixed-phase hydrogenated silicon oxide (SiO x:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped …
Abstract: Low band gap germanium:silicon (Ge:Si) solar cells for operation with a silicon solar cell in a multi-junction concentrator system was designed, fabricated, characterized and analyzed. First principle simulations show that an efficiency of 2.3% can be achieved for 88% Ge concentration Ge:Si solar cells below Si at 30 suns. Through ...
Mixed-phase hydrogenated silicon oxide (SiO x:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiO x:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric field.
The incorporation of germanium breathes new life into solar cell technology, offering several edges over traditional silicon-based photovoltaic systems. The conversion efficiency – a key yardstick in renewable energy …
In this paper, germanium-based solar cells were designed based on germanium (Ge) materials, and the cross-cone (CC) nanostructures were used as the absorber layer of the solar cells. The optical path inside the absorber layer was increased by microstructure reflection, thereby increasing the absorption efficiency of the germanium-based solar cell. The …
We investigated high-efficiency two-terminal tandem photovoltaic (PV) devices consisting of a p/i/n thin film silicon top sub-cell (p/i/n-TFS) and a heterojunction with an intrinsic thin-layer ...
Silicon germanium alloys are of great interest for thin film solar cells, thanks to their adjustable band gap and stronger absorption when compared to crystalline silicon. However, there are two main difficulties in achieving high-efficiency single-crystal SiGe solar cells with respect to the material growth. The first is the control of dislocations (Mooney
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