In oxidized samples, grain surfaces exhibit a chemical contrast, interpreted as the result of a TiO2 segregation that occurs during the sintering stage. Moreover, the in-detail characterization of …
In oxidized samples, grain surfaces exhibit a chemical contrast, interpreted as the result of a TiO2 segregation that occurs during the sintering stage. Moreover, the in-detail characterization of …
SrTiO 3-based grain boundary barrier layer capacitor (GBBLC) material is usually prepared in an interrupted two-stage firing process. It consists of sintering at about …
A new technique to process ceramic/polymer grain boundary capacitors has been developed and demonstrated using BaTiO 3 as the ceramic conducting phase and LaRC-TPI polymer as the insulating phase. The particles were characterized by transmission electron microscopy and the dielectric properties of the capacitors were measured at room ...
A reverse boundary layer capacitor (RBLC) model is proposed to achieve optimum field distribution, leading to high breakdown field and high energy density in glass ceramics, by introducing...
This study employs solid-state and chemical plating methods to fabricate aluminum grain boundary capacitors using Al@CuO composite materials. The materials were …
grain-boundary barrier layer capacitor (BLC). The con- ventional processing of the SrTiO3-based BLC consists of two steps: i) sintering of a donor-doped SrTiO3 powder compact in a reducing …
For R g <R gb, we can say that the grain boundaries are insulating and grains are semiconductor, which is consistent with internal barrier layer capacitance model (IBLC). It …
A new technique to process ceramic/polymer grain boundary capacitors has been developed and demonstrated using BaTiO 3 as the ceramic conducting phase and LaRC-TPI …
SrTiO 3-based grain boundary barrier layer capacitor (GBBLC) material is usually prepared in an interrupted two-stage firing process. It consists of sintering at about 1400 °C in a reducing atmosphere. Then metal oxides were painted on the sample surface and finally a partial reoxidation took place at the grain boundaries at about 1000 °C to ...
This study employs solid-state and chemical plating methods to fabricate aluminum grain boundary capacitors using Al@CuO composite materials. The materials were prepared under varying compact pressures (200 psi, 500 psi, and 700 psi) and thermal treatment (450°C, 500°C, and 550°C). The dielectric layer structure, comprising aluminum oxide ...
Disclosed is an SrTiO 3 -based grain boundary barrier layer capacitor which is superb in dielectric constant and temperature characteristics. It is prepared by infiltrating a liquid-phase oxide mixture into a donor-doped SrTiO 3 matrix to form second-phase dielectric layers at the grain boundaries of the matrix. The liquid-phase oxide mixture comprises CaO and BaO in a particular molar ratio.
A strontium titanate (SrTiO3)-based grain boundary barrier layer capacitor (GBBLC) dielectric material containing niobium pentoxide (Nb2O5), bismuth titania (Bi2O3·3TiO2) and lithium fluoride ...
Reverse boundary layer capacitor (RBLC) configuration model, where the grain boundary has a higher electrical conductivity than the grain, is proposed in glass/ceramic composites for dielectric energy storage applications. By introducing glass additives as grain boundaries with electrical conductivity higher than ceramic grains, the steady electric field …
Semantic Scholar extracted view of "SrTiO3-based boundary-layer capacitors" by N. Yamaoka. Skip to search form Skip to main content Skip to account menu Semantic Scholar''s Logo. Search 222,215,759 papers from all fields of science. Search. Sign In Create Free Account. Corpus ID: 138667204; SrTiO3-based boundary-layer capacitors …
A reverse boundary layer capacitor (RBLC) model is proposed to achieve optimum field distribution, leading to high breakdown field and high energy density in glass ceramics, by …
A strontium titanate (SrTiO 3)-based grain boundary barrier layer capacitor (GBBLC) dielectric material containing niobium pentoxide (Nb 2 O 5), bismuth titania (Bi 2 O 3 ·3TiO 2) and lithium fluoride (LiF) has been produced by a single firing process below 1200 °C s dielectric properties and microstructure show typical values of ε eff ∼37×10 4, tangent δ∼4%, …
SiTiO3 capacitor material with indiffused Bi2O3 was studied using SEM, ESCA combined with Ar+ ion-etching, and TEM equipped with EDX. The apparent thickness of a second-phase layer observed with SEM was found to be influenced by in-depth effects. ESCA and TEM results show that only a 10- to 100-nm thick layer of second phase is present between the SrTiO3 grains. In …
grain-boundary barrier layer capacitor (BLC). The con- ventional processing of the SrTiO3-based BLC consists of two steps: i) sintering of a donor-doped SrTiO3 powder compact in a reducing atmosphere to make the grains semi-conductive and ii) infiltration of an oxide melt into
In oxidized samples, grain surfaces exhibit a chemical contrast, interpreted as the result of a TiO2 segregation that occurs during the sintering stage. Moreover, the in-detail characterization of infiltrated specimens reveals that intergranular regions present a facies strongly influenced by the type of mixture used. During the infiltration ...
This research provides a feasible approach to systematically explore the semi-conducting and insulating processes for SrTiO3 grain boundary ceramic capacitors, as well as to develop a low-lead oxidant coating.
Abstract: Barrier layer capacitors have been fabricated by introducing a thin CuO layer at the grain boundaries of semiconducting (Ba/sub 0.8/Sr/sub 0.2/) (Zr/sub 0.1/Ti/sub 0.9/)O/sub 3/ ceramics. Three different methods are adopted in …
A strontium titanate (SrTiO3)-based grain boundary barrier layer capacitor (GBBLC) dielectric material containing niobium pentoxide (Nb2O5), bismuth titania (Bi2O3·3TiO2) and lithium fluoride ...
Abstract: Barrier layer capacitors have been fabricated by introducing a thin CuO layer at the grain boundaries of semiconducting (Ba/sub 0.8/Sr/sub 0.2/) (Zr/sub 0.1/Ti/sub …
This research provides a feasible approach to systematically explore the semi-conducting and insulating processes for SrTiO3 grain boundary ceramic capacitors, as well as to develop a …
For R g <R gb, we can say that the grain boundaries are insulating and grains are semiconductor, which is consistent with internal barrier layer capacitance model (IBLC). It occurs due to space-charge polarization and vacancies created at the grain boundaries .
Grain boundary layer capacitors are processed from Ba(Ti 1 − x Sn x)O 3 solid solutions (0 < × < 0.25), doped simultaneously with donor and acceptor impurities. The starting powders are prepared by the hydrothermal method. Dielectric properties of these ceramics are strongly dependent on the concentration of donor as well as acceptor dopants ...
Semantic Scholar extracted view of "Ceramic boundary-layer capacitors" by R. Mauczok et al. Skip to search form Skip to main content Skip to account menu. Semantic Scholar''s Logo . Search 222,812,161 papers from all fields of science. Search. Sign In Create Free Account. Corpus ID: 114771326; Ceramic boundary-layer capacitors …
Other articles where grain boundary barrier-layer capacitor is discussed: capacitor dielectric and piezoelectric ceramics: Barrier-layer capacitors: In grain-boundary BL capacitors slow cooling in air or oxygen allows oxygen to diffuse into the grain boundaries and reoxidize thin layers adjacent to the boundaries. Oxidizing agents such as bismuth and copper oxides also can be …
Grain boundary layer capacitors are processed from Ba(Ti 1 − x Sn x)O 3 solid solutions (0 < × < 0.25), doped simultaneously with donor and acceptor impurities. The starting powders are prepared by the hydrothermal method. Dielectric properties of these ceramics are …
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